Toshiba Semiconductor and Storage SSM3K361TU,LF

Product Details

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

115pF @ 20V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

2.5A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id

2V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

95mOhm @ 5A, 10V

Series

-

Power Dissipation (Max)

1.04W (Ta), 20.8W (Tc)

FET Type

N-Channel

Supplier Device Package

DPAK

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

1.8nC @ 5V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

25V