Toshiba Semiconductor and Storage SSM3K344R,LF

Product Details

Series

-

Power Dissipation (Max)

313mW (Tj)

FET Type

P-Channel

Supplier Device Package

SC-89-3

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

2.1nC @ 4.5V

Vgs (Max)

±6V

Drain to Source Voltage (Vdss)

20V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

156pF @ 5V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

760mA (Tj)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Mounting Type

Surface Mount

Package / Case

SC-89, SOT-490

Vgs(th) (Max) @ Id

1.2V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

360mOhm @ 350mA, 4.5V