Toshiba Semiconductor and Storage SSM3K337R,LF

Product Details

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

6A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Mounting Type

Surface Mount

Package / Case

6-WDFN Exposed Pad

Vgs(th) (Max) @ Id

2.5V @ 100µA

Operating Temperature

150°C

Rds On (Max) @ Id, Vgs

36mOhm @ 4A, 10V

Series

U-MOSVIII-H

Power Dissipation (Max)

2.5W (Ta)

FET Type

N-Channel

Supplier Device Package

6-UDFNB (2x2)

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

9.3nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

60V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

550pF @ 10V