Toshiba Semiconductor and Storage SSM3K336R,LF

Product Details

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

2Ohm @ 100mA, 4V

Series

-

Power Dissipation (Max)

470mW (Ta)

FET Type

N-Channel

Supplier Device Package

3-X1DFN1006

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

0.45nC @ 4.5V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

60V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

32pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

100mA (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4V

Mounting Type

Surface Mount

Package / Case

3-UFDFN

Vgs(th) (Max) @ Id

1V @ 250µA