Toshiba Semiconductor and Storage SSM3K333R,LF

Product Details

Vgs (Max)

±10V

Drain to Source Voltage (Vdss)

20V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

535pF @ 10V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

5.8A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Vgs(th) (Max) @ Id

800mV @ 250µA

Operating Temperature

150°C (TJ)

Rds On (Max) @ Id, Vgs

25mOhm @ 4A, 4.5V

Series

-

Power Dissipation (Max)

1.56W (Tc)

FET Type

N-Channel

Supplier Device Package

SOT-23

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

7.7nC @ 4.5V