Toshiba Semiconductor and Storage SSM3K324R,LF

Product Details

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

156pF @ 6V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

3.6A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Mounting Type

Surface Mount

Package / Case

3-XFDFN

Vgs(th) (Max) @ Id

1.3V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

76mOhm @ 400mA, 4.5V

Series

FemtoFET™

Power Dissipation (Max)

500mW (Ta)

FET Type

N-Channel

Supplier Device Package

3-PICOSTAR

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

1.2nC @ 4.5V

Vgs (Max)

8V

Drain to Source Voltage (Vdss)

12V