Images are for reference only. See Product Specifications for product details
Toshiba Semiconductor and Storage SSM3K309T(TE85L,F)
MOSFET N-CH 20V 4.7A TSM
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- FET Type
- N-Channel
- Supplier Device Package
- TSM
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 14.8nC @ 4V
- Vgs (Max)
- ±10V
- Drain to Source Voltage (Vdss)
- 20V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1120pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 5A (Ta)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 1.5V, 4V
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Vgs(th) (Max) @ Id
- -
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 28mOhm @ 4A, 4V
- Series
- -
- Power Dissipation (Max)
- 700mW (Ta)