Toshiba Semiconductor and Storage SSM3K15AFU,LF

Product Details

Vgs (Max)

±10V

Drain to Source Voltage (Vdss)

20V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

36pF @ 10V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

250mA (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

1.2V, 4.5V

Mounting Type

Surface Mount

Package / Case

SC-101, SOT-883

Vgs(th) (Max) @ Id

1V @ 100µA

Operating Temperature

150°C (TJ)

Rds On (Max) @ Id, Vgs

1.1Ohm @ 150mA, 4.5V

Series

U-MOSIII

Power Dissipation (Max)

500mW (Ta)

FET Type

N-Channel

Supplier Device Package

CST3C

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

0.34nC @ 4.5V