Toshiba Semiconductor and Storage SSM3K123TU,LF

Product Details

Vgs(th) (Max) @ Id

0.9V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

45mOhm @ 3.5A, 4.5V

Series

-

Power Dissipation (Max)

-

FET Type

P-Channel

Supplier Device Package

DFN2020-6J

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

7.8nC @ 4.5V

Vgs (Max)

±8V

Drain to Source Voltage (Vdss)

12V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

740pF @ 4V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

6A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Mounting Type

Surface Mount

Package / Case

6-WDFN Exposed Pad