Toshiba Semiconductor and Storage SSM3K116TU,LF

Product Details

FET Type

P-Channel

Gate Charge (Qg) (Max) @ Vgs

28nC @ 10V

Packaging

Digi-Reel®

Drain to Source Voltage (Vdss)

30V

Vgs (Max)

±12V

Current - Continuous Drain (Id) @ 25°C

4A (Tc)

Technology

MOSFET (Metal Oxide)

Drive Voltage (Max Rds On, Min Rds On)

10V

FET Feature

-

Part Status

Active

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Vgs(th) (Max) @ Id

1.5V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

54mOhm @ 4.3A, 10V

Series

TrenchFET®

Power Dissipation (Max)

1.6W (Ta), 2.8W (Tc)