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Toshiba Semiconductor and Storage SSM3K106TU(TE85L)
MOSFET N-CH 20V 1.2A UFM
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 7.8pF @ 3V
- Technology
- MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C
- 100mA (Ta)
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 2.5V, 4V
- Part Status
- Obsolete
- Mounting Type
- Surface Mount
- Package / Case
- SC-75, SOT-416
- Vgs(th) (Max) @ Id
- 1.5V @ 100µA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 4Ohm @ 10mA, 4V
- Series
- π-MOSVI
- Power Dissipation (Max)
- 200mW (Ta)
- FET Type
- N-Channel
- Supplier Device Package
- SSM
- Packaging
- Digi-Reel®
- Drain to Source Voltage (Vdss)
- 30V