Toshiba Semiconductor and Storage SSM3J56MFV,L3F

Product Details

Rds On (Max) @ Id, Vgs

150mOhm @ 1A, 4.5V

Series

U-MOSVI

Power Dissipation (Max)

600mW (Ta)

FET Type

P-Channel

Supplier Device Package

S-Mini

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

4.6nC @ 4.5V

Vgs (Max)

±8V

Drain to Source Voltage (Vdss)

20V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

270pF @ 10V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

2A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Vgs(th) (Max) @ Id

-

Operating Temperature

150°C (TJ)