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Toshiba Semiconductor and Storage SSM3J375F,LF

SMALL SIGNAL MOSFET P-CH VDSS:-2

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
0
Stock
6000

Product Details

Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
290pF @ 10V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
3.9A (Ta)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Mounting Type
Surface Mount
Package / Case
SOT-23-3 Flat Leads
Vgs(th) (Max) @ Id
1V @ 1mA
Operating Temperature
150°C
Rds On (Max) @ Id, Vgs
93mOhm @ 1.5A, 4.5V
Series
U-MOSVI
Power Dissipation (Max)
1W (Ta)
FET Type
P-Channel
Supplier Device Package
SOT-23F
Packaging
Digi-Reel®
Gate Charge (Qg) (Max) @ Vgs
4.6nC @ 4.5V
Vgs (Max)
+6V, -8V
Drain to Source Voltage (Vdss)
20V