Toshiba Semiconductor and Storage SSM3J372R,LF

Product Details

Series

-

Power Dissipation (Max)

3.8W (Ta), 83W (Tc)

FET Type

N-Channel

Supplier Device Package

DPAK

Packaging

Cut Tape (CT)

Gate Charge (Qg) (Max) @ Vgs

61nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

90V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

2900pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

8.7A (Ta), 41A (Tc)

Part Status

Last Time Buy

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id

2.5V @ 250µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

20mOhm @ 20A, 10V