Toshiba Semiconductor and Storage SSM3J36MFV,L3F

Product Details

Vgs(th) (Max) @ Id

-

Operating Temperature

150°C (TJ)

Rds On (Max) @ Id, Vgs

120mOhm @ 1.6A, 4V

Series

π-MOSVI

Power Dissipation (Max)

1.25W (Ta)

FET Type

N-Channel

Supplier Device Package

TSM

Packaging

Digi-Reel®

Drain to Source Voltage (Vdss)

30V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

152pF @ 10V

Technology

MOSFET (Metal Oxide)

Current - Continuous Drain (Id) @ 25°C

3.2A (Ta)

FET Feature

-

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4V

Part Status

Obsolete

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3