Toshiba Semiconductor and Storage SSM3J36FS,LF

Product Details

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

3Ohm @ 115mA, 10V

Series

-

Power Dissipation (Max)

430mW (Ta)

FET Type

N-Channel

Supplier Device Package

X1-DFN1006-3

Packaging

Digi-Reel®

Drain to Source Voltage (Vdss)

60V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

25pF @ 25V

Technology

MOSFET (Metal Oxide)

Current - Continuous Drain (Id) @ 25°C

260mA (Ta)

FET Feature

-

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Part Status

Active

Mounting Type

Surface Mount

Package / Case

3-UFDFN

Vgs(th) (Max) @ Id

2V @ 250µA