Toshiba Semiconductor and Storage SSM3J35CTC,L3F

Product Details

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

0.68nC @ 4.5V

Vgs (Max)

±8V

Drain to Source Voltage (Vdss)

30V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

50pF @ 15V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

350mA (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Mounting Type

Surface Mount

Package / Case

SC-70, SOT-323

Vgs(th) (Max) @ Id

1.1V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

1.4Ohm @ 350mA, 4.5V

Series

Automotive, AEC-Q101, TrenchMOS™

Power Dissipation (Max)

260mW (Ta), 830mW (Tc)

FET Type

N-Channel

Supplier Device Package

SC-70