Toshiba Semiconductor and Storage SSM3J35CT,L3F

Product Details

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

15pF @ 25V

Technology

MOSFET (Metal Oxide)

Current - Continuous Drain (Id) @ 25°C

250mA (Ta)

FET Feature

-

Drive Voltage (Max Rds On, Min Rds On)

10V

Part Status

Not For New Designs

Mounting Type

Surface Mount

Package / Case

SC-89, SOT-490

Vgs(th) (Max) @ Id

2.3V @ 1mA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

2.4Ohm @ 250mA, 10V

Series

-

Power Dissipation (Max)

150mW (Ta)

FET Type

N-Channel

Supplier Device Package

EMT3F (SOT-416FL)

Packaging

Digi-Reel®

Drain to Source Voltage (Vdss)

60V