Toshiba Semiconductor and Storage SSM3J352F,LF

Product Details

Package / Case

3-UFDFN

Vgs(th) (Max) @ Id

2.1V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

8Ohm @ 100mA, 5V

Series

-

Power Dissipation (Max)

470mW (Ta)

FET Type

P-Channel

Supplier Device Package

3-DFN1006 (1.0x0.6)

Packaging

Digi-Reel®

Drain to Source Voltage (Vdss)

50V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

27pF @ 25V

Technology

MOSFET (Metal Oxide)

Current - Continuous Drain (Id) @ 25°C

180mA (Ta)

FET Feature

-

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 5V

Part Status

Active

Mounting Type

Surface Mount