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Toshiba Semiconductor and Storage SSM3J351R,LF
MOSFET P-CH 60V 3.5A SOT-23F
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 42
Product Details
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 639pF @ 25V
- Part Status
- Active
- Current - Continuous Drain (Id) @ 25°C
- 2A (Ta)
- Mounting Type
- Surface Mount
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Base Part Number
- STR2
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA
- Operating Temperature
- 150°C (TJ)
- Series
- STripFET™ H6
- Rds On (Max) @ Id, Vgs
- 56mOhm @ 1A, 10V
- FET Type
- P-Channel
- Power Dissipation (Max)
- 350mW (Tc)
- Packaging
- Digi-Reel®
- Supplier Device Package
- SOT-23
- Vgs (Max)
- ±20V
- Gate Charge (Qg) (Max) @ Vgs
- 6nC @ 4.5V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 30V