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Toshiba Semiconductor and Storage SSM3J334R,LF

MOSFET P CH 30V 4A SOT-23F

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
0
Stock
12583

Product Details

Vgs(th) (Max) @ Id
-
Operating Temperature
150°C (TJ)
Rds On (Max) @ Id, Vgs
55mOhm @ 4A, 4.5V
Series
U-MOSVII-H
Power Dissipation (Max)
1W (Ta)
FET Type
N-Channel
Supplier Device Package
SOT-23F
Packaging
Digi-Reel®
Drain to Source Voltage (Vdss)
30V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
190pF @ 30V
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
4A (Ta)
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Part Status
Active
Mounting Type
Surface Mount
Package / Case
SOT-23-3 Flat Leads