Toshiba Semiconductor and Storage SSM3J327R,LF

Product Details

Rds On (Max) @ Id, Vgs

1.2Ohm @ 200mA, 2.5V

Series

-

Power Dissipation (Max)

150mW (Ta)

FET Type

N-Channel

Supplier Device Package

EMT3

Packaging

Digi-Reel®

Drain to Source Voltage (Vdss)

20V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

25pF @ 10V

Technology

MOSFET (Metal Oxide)

Current - Continuous Drain (Id) @ 25°C

200mA (Ta)

FET Feature

-

Drive Voltage (Max Rds On, Min Rds On)

1.2V, 2.5V

Part Status

Not For New Designs

Mounting Type

Surface Mount

Package / Case

SC-75, SOT-416

Vgs(th) (Max) @ Id

1V @ 1mA

Operating Temperature

150°C (TJ)