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Toshiba Semiconductor and Storage SSM3J15CT(TPL3)
MOSFET P-CH 30V 0.1A CST3
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Vgs (Max)
- 8V
- Drain to Source Voltage (Vdss)
- 12V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 674pF @ 6V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 7.1A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 1.8V, 4.5V
- Mounting Type
- Surface Mount
- Package / Case
- 3-XFDFN
- Vgs(th) (Max) @ Id
- 1.2V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 19mOhm @ 900mA, 4.5V
- Series
- FemtoFET™
- Power Dissipation (Max)
- 500mW (Ta)
- FET Type
- N-Channel
- Supplier Device Package
- 3-PICOSTAR
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 5nC @ 4.5V