Toshiba Semiconductor and Storage SSM3J132TU,LF

Product Details

Series

TrenchFET®

Rds On (Max) @ Id, Vgs

19.2mOhm @ 7A, 10V

FET Type

P-Channel

Power Dissipation (Max)

2W (Ta), 4.2W (Tc)

Packaging

Digi-Reel®

Supplier Device Package

6-TSOP

Vgs (Max)

±20V

Gate Charge (Qg) (Max) @ Vgs

69nC @ 10V

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

FET Feature

-

Input Capacitance (Ciss) (Max) @ Vds

2580pF @ 15V

Part Status

Active

Current - Continuous Drain (Id) @ 25°C

8A (Tc)

Mounting Type

Surface Mount

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Package / Case

SOT-23-6 Thin, TSOT-23-6

Base Part Number

SI3421

Vgs(th) (Max) @ Id

3V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)