Toshiba Semiconductor and Storage SSM3J117TU,LF

Product Details

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

230pF @ 25V

Technology

MOSFET (Metal Oxide)

Current - Continuous Drain (Id) @ 25°C

5.5A (Tc)

FET Feature

-

Drive Voltage (Max Rds On, Min Rds On)

10V

Part Status

Active

Mounting Type

Surface Mount

Package / Case

TO-261-4, TO-261AA

Vgs(th) (Max) @ Id

4V @ 1mA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

150mOhm @ 5A, 10V

Series

TrenchMOS™

Power Dissipation (Max)

8W (Tc)

FET Type

N-Channel

Supplier Device Package

SC-73

Packaging

Digi-Reel®

Drain to Source Voltage (Vdss)

55V