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Toshiba Semiconductor and Storage RN2969(TE85L,F)
TRANS 2PNP PREBIAS 0.2W US6
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 3000
Product Details
- Power - Max
- 4W
- Mounting Type
- Through Hole
- Package / Case
- 10-SIP
- Transistor Type
- 4 NPN Darlington (Quad)
- Operating Temperature
- 150°C (TJ)
- Frequency - Transition
- -
- Supplier Device Package
- 10-SIP
- Vce Saturation (Max) @ Ib, Ic
- 2V @ 10mA, 3A
- Current - Collector (Ic) (Max)
- 4A
- Series
- -
- Current - Collector Cutoff (Max)
- 100µA (ICBO)
- Packaging
- Bulk
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 1000 @ 3A, 4V
- Part Status
- Active
- Voltage - Collector Emitter Breakdown (Max)
- 60V