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Toshiba Semiconductor and Storage RN2905,LF(CT
TRANS 2PNP PREBIAS 0.2W US6
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Resistor - Base (R1)
- 22kOhms
- Frequency - Transition
- 230MHz
- Supplier Device Package
- DFN1412-6
- Resistor - Emitter Base (R2)
- 22kOhms
- Vce Saturation (Max) @ Ib, Ic
- 150mV @ 500µA, 10mA
- Series
- Automotive, AEC-Q101
- Current - Collector (Ic) (Max)
- 100mA
- Packaging
- Digi-Reel®
- Current - Collector Cutoff (Max)
- 1µA
- Part Status
- Active
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 60 @ 5mA, 5V
- Power - Max
- 480mW
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Mounting Type
- Surface Mount
- Package / Case
- 6-XFDFN Exposed Pad
- Transistor Type
- 1 NPN Pre-Biased, 1 PNP