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Toshiba Semiconductor and Storage RN2713JE(TE85L,F)

TRANS 2PNP PREBIAS 0.1W ESV

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
0.57
Stock
4000

Product Details

Supplier Device Package
ESV
Resistor - Emitter Base (R2)
10kOhms
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Series
-
Current - Collector (Ic) (Max)
100mA
Packaging
Digi-Reel®
Current - Collector Cutoff (Max)
100nA (ICBO)
Part Status
Active
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 10mA, 5V
Power - Max
100mW
Voltage - Collector Emitter Breakdown (Max)
50V
Mounting Type
Surface Mount
Package / Case
SOT-553
Transistor Type
2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Resistor - Base (R1)
10kOhms
Frequency - Transition
250MHz