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Toshiba Semiconductor and Storage RN2711(TE85L,F)

TRANS 2PNP PREBIAS 0.2W USV

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
0
Stock
0

Product Details

Power - Max
300mW
DC Current Gain (hFE) (Min) @ Ic, Vce
68 @ 5mA, 5V
Mounting Type
Surface Mount
Voltage - Collector Emitter Breakdown (Max)
50V
Package / Case
SC-74, SOT-457
Transistor Type
2 NPN - Pre-Biased (Dual)
Base Part Number
*MH2
Resistor - Base (R1)
47kOhms
Frequency - Transition
250MHz
Supplier Device Package
SMT6
Resistor - Emitter Base (R2)
47kOhms
Series
-
Vce Saturation (Max) @ Ib, Ic
300mV @ 500µA, 10mA
Packaging
Digi-Reel®
Current - Collector (Ic) (Max)
100mA
Part Status
Active
Current - Collector Cutoff (Max)
500nA