Images are for reference only. See Product Specifications for product details
Toshiba Semiconductor and Storage RN1966FE(TE85L,F)
TRANS 2NPN PREBIAS 0.1W ES6
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 4000
Product Details
- Power - Max
- 200mW
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Mounting Type
- Surface Mount
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Transistor Type
- 1 NPN, 1 PNP - Pre-Biased (Dual)
- Resistor - Base (R1)
- 4.7kOhms
- Frequency - Transition
- 250MHz, 200MHz
- Supplier Device Package
- US6
- Resistor - Emitter Base (R2)
- -
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 250µA, 5mA
- Series
- -
- Current - Collector (Ic) (Max)
- 100mA
- Packaging
- Digi-Reel®
- Current - Collector Cutoff (Max)
- 100µA (ICBO)
- Part Status
- Discontinued at Digi-Key
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 120 @ 1mA, 5V