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Toshiba Semiconductor and Storage RN1906FE(T5L,F,T)
TRANS 2NPN PREBIAS 0.1W ES6
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Part Status
- Obsolete
- Current - Collector Cutoff (Max)
- 1µA, 100nA
- Power - Max
- 1.5W
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 30 @ 10mA, 5V / 150 @ 2A, 2V
- Mounting Type
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max)
- 50V, 20V
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Transistor Type
- 1 NPN Pre-Biased, 1 PNP
- Base Part Number
- PBLS2002
- Resistor - Base (R1)
- 4.7kOhms
- Frequency - Transition
- 100MHz
- Supplier Device Package
- 8-SO
- Resistor - Emitter Base (R2)
- 4.7kOhms
- Series
- -
- Vce Saturation (Max) @ Ib, Ic
- 150mV @ 500µA, 10mA / 355mV @ 300mA, 3A
- Packaging
- Digi-Reel®
- Current - Collector (Ic) (Max)
- 100mA, 3A