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Toshiba Semiconductor and Storage RN1901FETE85LF
TRANS 2NPN PREBIAS 0.1W ES6
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 4000
Product Details
- Part Status
- Active
- Current - Collector Cutoff (Max)
- 500nA
- Power - Max
- 500mW
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 80 @ 5mA, 10V
- Mounting Type
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Package / Case
- SOT-563, SOT-666
- Transistor Type
- 2 NPN - Pre-Biased (Dual)
- Base Part Number
- NSBC1*
- Resistor - Base (R1)
- 4.7kOhms
- Frequency - Transition
- -
- Supplier Device Package
- SOT-563
- Resistor - Emitter Base (R2)
- 47kOhms
- Series
- -
- Vce Saturation (Max) @ Ib, Ic
- 250mV @ 1mA, 10mA
- Packaging
- Cut Tape (CT)
- Current - Collector (Ic) (Max)
- 100mA