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Toshiba Semiconductor and Storage RN1606(TE85L,F)
TRANS 2NPN PREBIAS 0.3W SM6
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 3000
Product Details
- Part Status
- Active
- Current - Collector Cutoff (Max)
- 1µA
- Power - Max
- 300mW
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 80 @ 5mA, 5V
- Mounting Type
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Package / Case
- SOT-563, SOT-666
- Transistor Type
- 1 NPN, 1 PNP - Pre-Biased (Dual)
- Base Part Number
- MD16
- Resistor - Base (R1)
- 22kOhms
- Frequency - Transition
- -
- Supplier Device Package
- SOT-666
- Resistor - Emitter Base (R2)
- 47kOhms
- Series
- -
- Vce Saturation (Max) @ Ib, Ic
- 150mV @ 500µA, 10mA
- Packaging
- Digi-Reel®
- Current - Collector (Ic) (Max)
- 100mA