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Toshiba Semiconductor and Storage HN1B04FU-GR,LF
TRANS NPN/PNP 50V 0.15A US6
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Frequency - Transition
- 80MHz
- Supplier Device Package
- ES6
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 10mA, 100mA
- Current - Collector (Ic) (Max)
- 150mA
- Series
- -
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- Packaging
- Tape & Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 200 @ 2mA, 6V
- Part Status
- Active
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Power - Max
- 100mW
- Mounting Type
- Surface Mount
- Package / Case
- SOT-563, SOT-666
- Transistor Type
- 2 PNP (Dual)
- Operating Temperature
- 150°C (TJ)