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Toshiba Semiconductor and Storage CUS10F30,H3F

DIODE SCHOTTKY 30V 1A USC

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
0
Stock
1006

Product Details

Supplier Device Package
-
Current - Reverse Leakage @ Vr
2mA @ 90V
Voltage - DC Reverse (Vr) (Max)
90V
Current - Average Rectified (Io)
1.5A
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Operating Temperature - Junction
-40°C ~ 150°C
Series
-
Voltage - Forward (Vf) (Max) @ If
810mV @ 1.5A
Packaging
Cut Tape (CT)
Diode Type
Schottky
Part Status
Obsolete
Mounting Type
Through Hole
Package / Case
Axial
Capacitance @ Vr, F
-