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Toshiba Semiconductor and Storage BAS516,H3F
DIODE GEN PURP 100V 250MA ESC
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0.03
- Stock
- 0
Product Details
- Current - Reverse Leakage @ Vr
- 5µA @ 800V
- Voltage - DC Reverse (Vr) (Max)
- 800V
- Current - Average Rectified (Io)
- 1A
- Speed
- Standard Recovery >500ns, > 200mA (Io)
- Operating Temperature - Junction
- -55°C ~ 150°C
- Series
- -
- Voltage - Forward (Vf) (Max) @ If
- 1V @ 1A
- Packaging
- Tape & Reel (TR)
- Diode Type
- Standard
- Part Status
- Active
- Mounting Type
- Through Hole
- Package / Case
- DO-204AL, DO-41, Axial
- Capacitance @ Vr, F
- 10pF @ 4V, 1MHz
- Supplier Device Package
- DO-204AL (DO-41)