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Toshiba Semiconductor and Storage BAS316,H3F
DIODE GEN PURP 100V 250MA USC
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0.03
- Stock
- 0
Product Details
- Supplier Device Package
- ESC
- Reverse Recovery Time (trr)
- 3ns
- Current - Reverse Leakage @ Vr
- 200nA @ 80V
- Voltage - DC Reverse (Vr) (Max)
- 100V
- Current - Average Rectified (Io)
- 250mA
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Operating Temperature - Junction
- 150°C (Max)
- Series
- -
- Voltage - Forward (Vf) (Max) @ If
- 1.25V @ 150mA
- Diode Type
- Standard
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- SC-79, SOD-523
- Capacitance @ Vr, F
- 0.35pF @ 0V, 1MHz