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Toshiba Semiconductor and Storage 2SK879-Y(TE85L,F)
JFET N-CH 0.1W USM
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 2836
Product Details
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Base Part Number
- J112
- Resistance - RDS(On)
- 50 Ohms
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Supplier Device Package
- TO-92-3
- Voltage - Breakdown (V(BR)GSS)
- 35V
- Series
- -
- Voltage - Cutoff (VGS off) @ Id
- 1V @ 1µA
- FET Type
- N-Channel
- Current - Drain (Idss) @ Vds (Vgs=0)
- 5mA @ 15V
- Packaging
- Cut Tape (CT)
- Input Capacitance (Ciss) (Max) @ Vds
- -
- Part Status
- Active
- Power - Max
- 625mW