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Toshiba Semiconductor and Storage 2SK3906(Q)
MOSFET N-CH 600V 20A TO-3PN
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Rds On (Max) @ Id, Vgs
- 4.5mOhm @ 9A, 10V
- Series
- U-MOSVI-H
- Power Dissipation (Max)
- 1W (Ta)
- FET Type
- N-Channel
- Supplier Device Package
- 8-SOP (5.5x6.0)
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 49nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 4600pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 18A (Ta)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.173", 4.40mm Width)
- Vgs(th) (Max) @ Id
- 2.3V @ 1mA
- Operating Temperature
- 150°C (TJ)