Toshiba Semiconductor and Storage 2SK3868(Q,M)

Product Details

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

4250pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

20A (Ta)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-3P-3, SC-65-3

Vgs(th) (Max) @ Id

4V @ 1mA

Operating Temperature

150°C (TJ)

Rds On (Max) @ Id, Vgs

330mOhm @ 10A, 10V

Series

-

Power Dissipation (Max)

150W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-3P(N)

Packaging

Bulk

Gate Charge (Qg) (Max) @ Vgs

60nC @ 10V

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

600V