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Toshiba Semiconductor and Storage 2SK3565(Q,M)
MOSFET N-CH 900V 5A TO-220SIS
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Rds On (Max) @ Id, Vgs
- 59mOhm @ 20A, 15V
- Series
- TrenchFET®
- Power Dissipation (Max)
- 3.12W (Ta), 156W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-263 (D2Pak)
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 113nC @ 15V
- Vgs (Max)
- ±25V
- Drain to Source Voltage (Vdss)
- 200V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 2735pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 33A (Tc)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 10V, 15V
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id
- 4.5V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)