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Toshiba Semiconductor and Storage 2SK3564(STA4,Q,M)
MOSFET N-CH 900V 3A TO-220SIS
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 1.73
- Stock
- 772
Product Details
- Mounting Type
- Through Hole
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Package / Case
- TO-220-3
- Base Part Number
- STF4N
- Vgs(th) (Max) @ Id
- 5V @ 100µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Series
- MDmesh™ K5
- Rds On (Max) @ Id, Vgs
- 2.1Ohm @ 1A, 10V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 20W (Tc)
- Packaging
- Tube
- Supplier Device Package
- TO-220FP
- Vgs (Max)
- ±30V
- Gate Charge (Qg) (Max) @ Vgs
- 5.3nC @ 10V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 900V
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 173pF @ 100V
- Part Status
- Active
- Current - Continuous Drain (Id) @ 25°C
- 4A (Tc)