Toshiba Semiconductor and Storage 2SK3466(TE24L,Q)

Product Details

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Vgs(th) (Max) @ Id

2.5V @ 1mA

Operating Temperature

150°C (TJ)

Rds On (Max) @ Id, Vgs

12.5mOhm @ 18A, 10V

Series

U-MOSIII

Power Dissipation (Max)

35W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-220NIS

Packaging

Bulk

Gate Charge (Qg) (Max) @ Vgs

91nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

60V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

5120pF @ 10V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

35A (Ta)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V