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Toshiba Semiconductor and Storage 2SK3462(TE16L1,NQ)

MOSFET N-CH 250V 3A PW-MOLD

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
0
Stock
0

Product Details

Series
-
Power Dissipation (Max)
50W (Tc)
FET Type
N-Channel
Supplier Device Package
4-TFP (9.2x9.2)
Packaging
Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs
17nC @ 10V
Vgs (Max)
±30V
Drain to Source Voltage (Vdss)
500V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
780pF @ 10V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
5A (Ta)
Part Status
Obsolete
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Surface Mount
Package / Case
SC-97
Vgs(th) (Max) @ Id
4V @ 1mA
Operating Temperature
150°C (TJ)
Rds On (Max) @ Id, Vgs
1.5Ohm @ 5A, 10V