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Toshiba Semiconductor and Storage 2SK3313(Q)
MOSFET N-CH 500V 12A TO220NIS
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 250V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 4000pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 20A (Ta)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- SC-97
- Vgs(th) (Max) @ Id
- 3.5V @ 1mA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 105mOhm @ 10A, 10V
- Series
- -
- Power Dissipation (Max)
- 125W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- 4-TFP (9.2x9.2)
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 100nC @ 10V