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Toshiba Semiconductor and Storage 2SK2866(F)

MOSFET N-CH 600V 10A TO-220AB

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
0
Stock
0

Product Details

Part Status
Obsolete
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id
4V @ 1mA
Operating Temperature
150°C (TJ)
Rds On (Max) @ Id, Vgs
3.6Ohm @ 1.5A, 10V
Series
-
Power Dissipation (Max)
75W (Tc)
FET Type
N-Channel
Supplier Device Package
TO-220SM
Packaging
Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs
25nC @ 10V
Vgs (Max)
±30V
Drain to Source Voltage (Vdss)
800V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
750pF @ 25V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
3A (Ta)