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Toshiba Semiconductor and Storage 2SK2009TE85LF
MOSFET N-CH 30V 0.2A SMINI
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0.55
- Stock
- 250
Product Details
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 798pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 10A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id
- 1.6V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 17mOhm @ 9A, 10V
- Series
- -
- Power Dissipation (Max)
- 1.71W (Ta)
- FET Type
- N-Channel
- Supplier Device Package
- TO-252-3
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 8.7nC @ 5V
- Vgs (Max)
- ±25V
- Drain to Source Voltage (Vdss)
- 30V