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Toshiba Semiconductor and Storage 2SK1119(F)
MOSFET N-CH 1000V 4A TO-220AB
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack
- Vgs(th) (Max) @ Id
- 2V @ 1mA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 46mOhm @ 12A, 10V
- Series
- -
- Power Dissipation (Max)
- 30W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-220NIS
- Packaging
- Bulk
- Gate Charge (Qg) (Max) @ Vgs
- 25nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 50V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 900pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 25A (Ta)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 4V, 10V