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Toshiba Semiconductor and Storage 2SJ380(F)
MOSFET P-CH 100V 12A TO220NIS
- Manufacturer
- Toshiba Semiconductor and Storage
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 2.55Ohm @ 1A, 10V
- Series
- -
- Power Dissipation (Max)
- 20W (Ta)
- FET Type
- P-Channel
- Supplier Device Package
- PW-MOLD
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 24nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 250V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 381pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 2A (Ta)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id
- 3.5V @ 1mA