Images are for reference only. See Product Specifications for product details

Toshiba Semiconductor and Storage 2SD2695,T6F(M

TRANS NPN 2A 60V TO226-3

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
0
Stock
0

Product Details

Operating Temperature
150°C (TJ)
Frequency - Transition
150MHz
Supplier Device Package
TO-220NIS
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 1A
Current - Collector (Ic) (Max)
3A
Series
-
Current - Collector Cutoff (Max)
100nA (ICBO)
Packaging
Bulk
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA, 5V
Part Status
Obsolete
Voltage - Collector Emitter Breakdown (Max)
80V
Power - Max
2W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Transistor Type
NPN